Enabling normally off operations, Model MB51T008A features on-state resistance of 13 mΩ and total gate charge of 16 nC, achieving half FOM of silicon-based power devices with equivalent breakdown voltage. Use of WLCSP packaging enables minimal parasitic inductance and high-frequency operations. IC is suited for high- and low-side switches in DC-DC converters employed in power supplies for data communications equipment, industrial products, and automobiles.
This story is related to the following:Gallium Nitride (GaN) Transistors | Integrated Circuits (IC)