Supplied in surface mount PowerPAK® 8 x 8 package, 600 V Models SiHH26N60E, SiHH21N60E, SiHH14N60E, and SiHH11N60E feature large drain terminal for low thermal resistance and Kelvin source connection that can increase efficiency by optimizing gate drive signal. Devices offer low on-resistance down to 0.135 Ω at 10 V and ultra-low gate charge down to 31 nC. RoHS-compliant and halogen-free, MOSFETs are suited for telecom, server, computing, lighting, and industrial applications.