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Toshiba Expands Line-up of e-MMC Version 5.1 Compliant Embedded NAND Flash Memory Modules
2015-03-24 03:04:31| Electronics - Topix.net
Featuring support for command queuing and secure write protection, the modules integrate NAND chips fabricated with Toshiba's 15nm second generation process technology and are fully compliant with the latest e - MMCTM [1] standard. The new products are designed for application in a wide range of digital consumer products, including smartphones, tablets and wearable devices.
Tags: version
flash
memory
modules
Flame-resistant/arc flash kits
2015-03-19 14:42:00| Electrical Construction & Maintenance
This line of kits is designed to help protect users from arc flash and unfavorable weather conditions. read more
USB 3.0 Flash Drive has sport car-inspired design, functionality.
2015-03-17 13:31:06| Industrial Newsroom - All News for Today
Available in 8, 16, 32, 64, 128, 256 GB storage capacities, Blaze B50 comes in red or black plastic, 51.4 x 20.0 x 12.0 mm housing that has surface treatment featuring carbon fiber pattern. SuperSpeed USB 3.0 interface (USB 2.0/1.1 compatible) supports transfer speeds up to 240 MB/sec read and 140 MB/sec write, and retractable USB connector design allows thumb-push operation and negates concern over cap loss. Included software provides 7 back up and security tools.
Tags: design
sport
flash
drive
NOR Flash Memory Devices offer fast read/write time.
2015-03-16 13:31:07| Industrial Newsroom - All News for Today
Available with 16-, 32-, or 64-Mbit of memory, 3 V Series SST26VF Serial Quad I/O™ SuperFlash® Memory Devices complete sector and block erase commands in just 18 ms and full chip erase operation in 35 ms. SQI interface, consisting of 104 MHz quad-bit address and data multiplex I/O serial interface, enables low-latency execute-in-place capability with minimal processor buffer memory. Standby current consumption is 15 µA, typical, and active read current at 104 MHz is 15 mA, typical.
Serial NOR Flash Memory delivers high-speed operation.
2015-03-13 13:31:06| Industrial Newsroom - All News for Today
Using single 1.8 V power supply for core and I/O voltage, 512 Mb density S25FS512S delivers SPI read performance of 80 MBps with quad DDR at 80 MHz clock speeds. Support is also standard for read operation at 133 MHz clock speeds in single, dual, and quad I/O mode as well as 1.08 MBps programming throughput. Available in -40 to +85 and -40 to +105°C operating ranges, memory offers 24- or 32-bit address options, Quad all (QPI, 4-4-4) read mode, and configurable initial read latency.
Tags: flash
operation
memory
serial
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