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1200V, 80 Milliohm Silicon Carbide MOSFET

2013-06-26 13:03:26| rfglobalnet Products

The second-generation SiC Z-FET™ 1200V MOSFET C2M0080120D delivers industry-leading power density and switching efficiency, at half the cost-per-amp of Cree’s previous-generation MOSFETs. At this price-to-performance point, the new device lowers system costs for OEMs and provides additional savings to the end-user through increased efficiency and lower installation costs, due to the lower size and weight of SiC-based systems.

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