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Front-End Modules utilize SOI RF CMOS technology. .

2014-12-09 14:30:52| Industrial Newsroom - All News for Today

Intended for RF Front-End Module foundry market, 0.18 µm Silicon on Insulator RF CMOS technology uses thin-film SOI on trap-rich, high resistivity substrates. Technology features 2.5 V switch FET, 2.5 V CMOS, native NMOS, 1.6 KΩ/square poly resistors, 2.2 fF/um2 MIM capacitors, 4LM and 4 micron thick top metal. SOI RF CMOS process technology is optimized for antenna switches and tuners, which are core components of wireless FEMs for cellular and Wi-Fi connectivity.

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