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Gallium Nitride RF Devices for Harsh Military Environments

2015-06-23 14:42:38| rfglobalnet Downloads

Today’s advanced military systems – including phased array radar, communications systems and EW sensors – require high-frequency, high-bandwidth, high-power, high-efficiency devices. These applications are where GaN differentiates itself from other materials. GaN devices can operate at higher bias voltages, which provides several advantages at both the system/subsystem and circuit level, leading to a proportional decrease in current requirement for the circuit. The bottom line: GaN improves the system-level trade-off of size, weight, and power.

Tags: military devices environments harsh

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