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Low-Resistance GaN Transistor reduces losses with step function.

2015-06-26 14:31:05| Industrial Newsroom - All News for Today

Offered in power conversion switch, 650 V blocking voltage transistor is based on design for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). This 650 V, 50 A GaN transistor achieves 12 Ω Rdson and accelerates extension of GaN-based technology from communications subsystems into power conversion subsystems.

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