Designed for high-power industrial applications where efficiency is critical, 1,200 V Silicon Carbide MOSFETs are suited for solar inverters, electric vehicles, welding, and medical devices. Units are rated at 80 mΩ and 50 mΩ and provide development flexibility by offering both industry standard TO-247 and SOT-227 packages. In addition to optimized short circuit withstand, devices feature ultra-low gate resistance for minimizing switching energy loss.
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