je.st
news
Home
› Stanford Researchers Advance Area Selective Atomic Layer Deposition To Develop Higher Performing, More Energy Efficient Electronics
Stanford Researchers Advance Area Selective Atomic Layer Deposition To Develop Higher Performing, More Energy Efficient Electronics
2016-01-14 01:04:46| chemicalonline Home Page
Stanford University researchers sponsored by Semiconductor Research Corporation (SRC), the world’s leading university-research consortium for semiconductor technologies, have developed a new area selective atomic layer deposition (ALD) process that promises to accelerate the manufacturing of higher performing, more energy efficient semiconductors
Tags: area
electronics
higher
energy
Category:Chemicals