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GaAs/GaN Power Doubler Hybrid Amplifier: RFPD3210 Datasheet

2015-09-28 11:57:37| rfglobalnet Downloads

The RFPD3210 is a GaAs/GaN power doubler hybrid amplifier operating in the 45 to 1218 MHz frequency range, and offering a minimum gain of 22.2 dB at 1218 MHz. Each device is unconditionally stable under all terminations with extremely high output capabilities, and is optimized for 45MHz to 1218MHz CATV amplifier systems.

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GaN RF Input-Matched Transistors: TGF3021-SM Datasheet

2015-09-24 18:32:51| rfglobalnet Downloads

The TGF3021-SM is a wideband 32 V RF transistor operating in the 0.03 to 4.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

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GaN RF Input-Matched Transistors: TGF3020-SM Datasheet

2015-09-24 18:27:05| rfglobalnet Downloads

The TGF3020-SM is a wideband 32 V RF transistor operating in the 4.0 to 6.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

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GaN RF Input-Matched Transistors: TGF3015-SM Datasheet

2015-09-24 18:23:29| rfglobalnet Downloads

The TGF3015-SM is a wideband 32 V RF transistor operating in the 30 MHz to 3.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

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GaN RF Input-Matched Transistors: TGF2965-SM Datasheet

2015-09-24 18:18:41| rfglobalnet Downloads

The TGF2965-SM is a wideband 32 V RF transistor operating in the 0.03 to 4.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

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