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Bluetooth Smart/Bluetooth Front-End Module: SKY66111-11 Datasheet

2015-09-03 11:05:23| wirelessdesignonline Downloads

The SKY66111-11 is a highly integrated front-end module featuring low power consumption of 10 mA at 10 dBm, Rx bypass and supply operation from 1.8 to 5 V, and comes in a 20-pin MCM 3.3 x 3.0 x 0.8 mm package. Samples, evaluation boards, and reference designs are available on request.

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GaN Power Amplifiers: TGA2216-SM Datasheet

2015-09-01 18:23:41| rfglobalnet Downloads

The TGA2216-SM is a wideband distributed GaN power amplifier that operates from 0.1-3.0 GHz, provides more than 10 W of saturated output power, and has greater than 13 dB of large signal gain. The device is available in a low-cost surface mount 32 lead AIN QFN package, and is ideally suited for commercial and military radar, communications, and electronic warfare.

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90W Discrete Power Transistor: TGF2023-2-20 Datasheet

2015-09-01 18:08:34| rfglobalnet Downloads

The TGF2023-2-20 is a 90W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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50W Discrete Power Transistor: TGF2023-2-10 Datasheet

2015-09-01 17:55:39| rfglobalnet Home Page

The TGF2023-2-10 is a 50W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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25W Discrete Power Transistor: TGF2023-2-05 Datasheet

2015-09-01 17:46:16| rfglobalnet Home Page

The TGF2023-2-05 is a 25W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

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