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High Linearity/High Gain Low-Noise Amplifier: SKY67161-306LF

2013-06-28 11:17:55| wirelessdesignonline Downloads

Skyworks’ SKY67161-306LF low noise amplifier covers the 0.6 to 1.1 GHz frequency range and is well suited for ultra low-noise, high gain, and high linearity systems as well as GSM, CDMA, WCDMA, and cellular infrastructure systems.

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High Linearity/High Gain Low-Noise Amplifier

2013-06-28 11:15:40| rfglobalnet Products

This GaAs pHEMT and HBT two-stage low-noise amplifier (LNA) features wideband performance (useable to 1.1 GHz), +5 V operation, and high gain (38 dB@ 849 MHz). It’s ideal for use in ultra low-noise, high gain, and high linearity systems as well as GSM, CDMA, WCDMA, and cellular infrastructure systems.

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High Linearity/High Gain Low-Noise Amplifier

2013-06-28 11:15:40| wirelessdesignonline Products

This GaAs pHEMT and HBT two-stage low-noise amplifier (LNA) features wideband performance (useable to 1.1 GHz), +5 V operation, and high gain (38 dB@ 849 MHz). It’s ideal for use in ultra low-noise, high gain, and high linearity systems as well as GSM, CDMA, WCDMA, and cellular infrastructure systems.

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Toshiba Adds High Gain 200W GaN HEMT Power Amplifier For C-Band Radar Applications

2013-06-07 10:20:04| rfglobalnet News Articles

Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., recently announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product family.

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Toshiba Adds High Gain 200W GaN HEMT Power Amplifier for C-Band RADAR Applications

2013-06-04 06:00:00| Industrial Newsroom - All News for Today

Offer High Power, Gain and Efficiency to Enhance Weather RADAR Performance<br /> <br /> SEATTLE - 2013 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2027, -Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., today announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product ...This story is related to the following:Power Transistors | Power Amplifiers

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