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GaN Power Amplifier is optimized for power and linearity.

2014-09-08 14:31:26| Industrial Newsroom - All News for Today

As 28–32 GHz GaN power amplifier (PA) in die form, CMD217 features >20 dB gain across operating frequency range with corresponding output 1 dB compression point of +36.7 dBm and saturated output power of +39.3 dBm (8.5 W). Power added efficiency is 28%–35% across band. This fully matched 50 Ω design requires only external bypass capacitors to complete bias circuitry. Suited for Ka-band communication systems applications, die is passivated for reliability and moisture protection. This story is related to the following:Communication Systems and EquipmentPower Amplifiers | Communications Amplifiers | High Power Amplifiers | Linear Amplifiers

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1,000 Watt Pulsed Power Amplifier Targeted for TWT Replacement

2014-08-29 16:35:08| rfglobalnet Downloads

API Technologies has expanded its line of Gallium Nitride (GaN) based power amplifiers to include designs that operate with output power levels up to 1,000 watts and frequencies to 18 GHz. These pulsed power amplifiers' long life and reduced size and weight offer longer life and better efficiencies than their TWT counterparts.

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1,000 Watt Pulsed Power Amplifier

2014-08-29 16:32:51| rfglobalnet Products

API Technologies has expanded its line of Gallium Nitride (GaN) based power amplifiers to include designs that operate with output power levels up to 1,000 watts and frequencies to 18 GHz.

Tags: power watt amplifier pulsed