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Tag: gain amplifier
Variable Gain Amplifier offers 3 dB noise figure and 39 dB gain.
2013-06-10 14:29:36| Industrial Newsroom - All News for Today
Intended for DOCSIS3.1 reverse path infrastructure applications, MAAM-011122 integrated linear 2-stage differential VGA operates from 5–300 MHz and offers 39 dB of gain with 31.5 dB attenuation range. Leveraged technologies produce linearity and output power that enable customers to achieve 36 dB MER for 64 QAM modulation with 39 channels at 52 dBmV per channel. Power down function for each amplifier stage allows reduced power consumption when less gain is required. This story is related to the following:Variable Gain Amplifiers
Toshiba Adds High Gain 200W GaN HEMT Power Amplifier For C-Band Radar Applications
2013-06-07 10:20:04| rfglobalnet News Articles
Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., recently announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product family.
Tags: high
power
applications
gain
MACOM Technology Solutions Announces New Ultra-Small Broadband Variable Gain Amplifier For Multi-Market Applications At IEEE MTT International Microwave Symposium 2013
2013-06-05 07:08:16| rfglobalnet News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance analog semiconductor solutions,recentlyannounced a new broadband variable gain amplifier for Multi-market applications.
Tags: international
technology
solutions
applications
MACOM Technology Solutions Extends CATV Portfolio With Highly Linear Variable Gain Amplifier At ANGACOM 2013 Exhibition And Congress
2013-06-05 04:16:38| rfglobalnet News Articles
M/A-COM Technology Solutions Inc. (MACOM), a leading supplier of high performance analog semiconductor solutions, introduced recently at the ANGACOM 2013 Exhibition and Congress, a highly linear two stage differential amplifier for DOCSIS3.1 reverse path infrastructure applications.
Tags: technology
solutions
highly
gain
Toshiba Adds High Gain 200W GaN HEMT Power Amplifier for C-Band RADAR Applications
2013-06-04 06:00:00| Industrial Newsroom - All News for Today
Offer High Power, Gain and Efficiency to Enhance Weather RADAR Performance<br /> <br /> SEATTLE - 2013 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2027, -Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., today announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product ...This story is related to the following:Power Transistors | Power Amplifiers
Tags: high
power
applications
gain
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