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Indium Corporation Features Indium, Gallium, and Germanium Materials at SVC Technical Conference

2014-04-15 06:00:00| Industrial Newsroom - All News for Today

Indium Corporation will feature their indium, gallium and germanium metals and compounds at the SVC Technical Conference May 6-7 in Chicago, IL.<br /> <br /> Indium Corporation supplies high-purity indium, gallium, and germanium metal. These metals are used in the production of alkaline dry cell batteries, flat-panel liquid crystal displays (LCDs), optical fibers, photovoltaic devices, III-V compound semiconductors, and more. Rigorous quality standards and advanced analytical instrumentation, ...This story is related to the following:Indium Metals | Gallium

Tags: features technical corporation materials

 

Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) And Substrate Wafer Market By Technology, Application, Product, Device & By Geography - Forecast & Analysis To 2013 - 2022

2014-04-04 05:52:23| rfglobalnet Home Page

Research and Markets (http://www.researchandmarkets.com/research/w29grv/gallium_nitride) has announced the addition of the"Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market by Technology, Application, Product, Device & by Geography - Forecast & Analysis to 2013 - 2022"report to their offering.

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Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) And Substrate Wafer Market Worth $15607.85M By 2022

2014-03-25 06:16:50| rfglobalnet News Articles

The report"Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Marketby Technology, Application, Product, Device, & by Geography - Forecast & Analysis to 2013 - 2022", published by MarketsandMarkets, defines and segments the global GaN (Gallium Nitride) market, it is expected to reach$15607.85 Millionby 2022 with analysis and forecasting the revenues and volumes for the overall market and all its sub-segments.

Tags: by market worth devices

 

A New Generation Of Gallium Nitride (GaN) Based Solid State Power Amplifiers For Satellite Communication

2014-01-10 13:00:23| rfglobalnet Home Page

The introduction of Gallium Nitride High Electron Mobility Transistors (GaN HEMT) in early 2000 has left an undeniable mark on the entire satellite communication landscape. It is now possible for the first time since the introduction of the Solid State Microwave Technology to design and manufacture Power Amplifiers that exceed by several orders of magnitude the reliability, linearity, power density and energy efficiency of all existing technologies, being GaAs, LDMOS, or TWT.By C. Damian, VP Product Line Management and Business Development, and D. Gelerman, President and CEO, Advantech Wireless Inc.

Tags: state based power communication

 

GaN Systems Showcases Gallium Nitride Power Semiconductors at iPower 2013 - Presents Paper on ...

2013-11-01 06:00:00| Industrial Newsroom - All News for Today

Leading experts discuss latest power electronic technologies at University of Warwick 27-28 November<br /> <br /> OTTAWA, Ontario -- GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is exhibiting and presenting a technical paper at iPower 2013 Conference and Exhibition, Warwick University on 27 and 28 November. Organised by IMAPS-UK and NMI in conjunction with the University&rsquo;s Electronics, Power and Microsystems Research Group, iPower 2013 brings ...This story is related to the following:Power Semiconductors | Power Transistors

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