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Digital Hall Effect Sensor ICs support low voltage operation.
2013-12-30 14:30:58| Industrial Newsroom - All News for Today
Operating from 2.7–24 V, MLX92231 and MLX92211 integrate Hall sensor element with offset cancellation mechanism, voltage regulator, and open-drain output driver. EEPROM memory, included, allows magnetic switching thresholds to be configured (including hysteresis). While MLX92211 targets applications requiring Hall effect latch magnetic characteristics, MLX92231 supports applications for Hall effect switch magnetic behavior. Both are constructed on mixed signal CMOS process technology. This story is related to the following:Electronic Components and Devices Sponsored by: Globtek Inc. - Your Power Partner...For Over 20 Years!Search for suppliers of: Integrated Circuits (IC)
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Off 64% or More - Three Stocks on a 52-Week Low, Held by Gurus
2013-12-29 05:07:19| Appliances - Topix.net
According to the GuruFocus Value Screen for finding 52-Week Lows , Turquoise Hill Resources Ltd. , Global-Tech Advanced Innovations and Rentech Nitrogen Partners LP are companies on a low and still held by billionaire investors.
Ultra fast, ultra low energy transistors in Electronic and Optical...
2013-12-28 10:35:51| Semiconductors - Topix.net
Dr. Reza Arghavani is the Managing Director of Technology for LAM Research Corporation.
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electronic
Skyworks Introduces New High Linearity, Active Bias, Low Noise Amplifier For Cellular Infrastructure
2013-12-27 06:35:16| wirelessdesignonline News Articles
Skyworks Solutions, Inc. has introduced a 0.7-1.2 gigahertz, single-die cascode, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifier (LNA) for cellular infrastructure applications such as tower-mounted amplifiers, remote radio units, repeaters, and base stations.
Skyworks Introduces New High Linearity, Active Bias, Low Noise Amplifier For Cellular Infrastructure
2013-12-23 08:22:19| Semiconductors - Topix.net
Skyworks Solutions, Inc. has introduced a 0.7-1.2 gigahertz, single-die cascode, gallium arsenide , pseudomorphic high electron mobility transistor low-noise amplifier for cellular infrastructure applications such as tower-mounted amplifiers, remote radio units, repeaters, and base stations.
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