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Toshiba Adds High Gain 200W GaN HEMT Power Amplifier For C-Band Radar Applications
2013-06-07 10:20:04| rfglobalnet News Articles
Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., recently announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product family.
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High Power Combiner handles up to 32 W. .
2013-06-04 14:28:39| Industrial Newsroom - All News for Today
Featuring 800–950 MHz frequency range, 8 way-0° Model ZB8CS-950-32W offers typical insertion loss of 0.4 dB and 30 dB typical isolation. Coaxial microwave RF power splitter/combiner operates at temperatures from -55 to 90°C and is suitable for UHF and cellular applications. This story is related to the following:Power Splitters | Power Splitter Combiners |
Toshiba Adds High Gain 200W GaN HEMT Power Amplifier for C-Band RADAR Applications
2013-06-04 06:00:00| Industrial Newsroom - All News for Today
Offer High Power, Gain and Efficiency to Enhance Weather RADAR Performance<br /> <br /> SEATTLE - 2013 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2027, -Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., today announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product ...This story is related to the following:Power Transistors | Power Amplifiers
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Toshiba Expands High Power C-Band GaN HEMT Product Line to Support the SATCOM Market
2013-06-04 06:00:00| Industrial Newsroom - All News for Today
Optimized for High Power, Gain and Efficiency to Support Extended C-Band Applications<br /> <br /> SEATTLE - 2013 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2027 - Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., today announced the expansion of its gallium nitride high electron mobility transistor (GaN HEMT) lineup with the addition of three new devices ...This story is related to the following:Telecommunications Integrated Circuits |
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KAW5050 High Power Transceiver Amplifier
2013-06-04 02:16:48| rfglobalnet Downloads
The KAW5050 high power transceiver amplifier provides peak powers of 1000W in the band 225-400MHz and is designed to carry all legacy and modern complex modulation formats. This unique design offers the customer the option of powering the system from either single or 3 phase power sources by a simple reconfiguration of the main AC input cable connections. The unit is designed for 24/7 continuous duty operation and comes with AR’s 3 year warranty.
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high power
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