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RF-Lambda Selects TriQuint GaN For New Line Of High Power Amplifiers

2013-06-30 19:05:00| rfglobalnet News Articles

TriQuint Semiconductor, Inc., a leading RF solutions supplier and technology innovator, recently announced that RF-Lambda, a global microwave products manufacturer, has developed a new line of high power amplifiers based on TriQuint gallium nitride (GaN) power transistors.

Tags: high line power selects

 

RF-Lambda Selects TriQuint GaN For New Line Of High Power Amplifiers

2013-06-30 19:05:00| wirelessdesignonline News Articles

TriQuint Semiconductor, Inc., a leading RF solutions supplier and technology innovator, recently announced that RF-Lambda, a global microwave products manufacturer, has developed a new line of high power amplifiers based on TriQuint gallium nitride (GaN) power transistors.

Tags: high line power selects

 
 

TriQuint Advanced RF Devices Support NASA Discoveries

2013-06-20 18:29:00| rfglobalnet Home Page

TriQuint Semiconductor, Inc., a leading RF solutions supplier and technology innovator, reflected on its role in helping land NASA’s Curiosity rover safely on Mars as program managers say the mission is reaching an important turning point.

Tags: support advanced devices nasa

 

TriQuint Accelerates Gallium Nitride Offerings, Releases Significant New Products And Foundry Services

2013-05-22 19:16:00| rfglobalnet News Articles

TriQuint Semiconductor, Inc., a leading RF solutions supplier and technology innovator, recently announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes.

Tags: services products significant releases

 

RFMW Introduces Dual LNA From TriQuint Semiconductor

2013-05-17 09:22:46| rfglobalnet News Articles

RFMW, Ltd. announces design and sales support for TriQuint Semiconductor dual device amplifier model TQP3M9041. Spanning the frequency range of 2.4GHz to 4GHz, this high linearity, ultra low noise figure LNA offers a 0.8dB noise figure in a balanced configuration at 1.95GHz. Input IP3 is 20dBm with associated gain of greater than 18dB.

Tags: dual introduces semiconductor lna

 

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