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Northrop Grumman Develops New Gallium Arsenide E-Band High-Power Monolithic Microwave Integrated Circuits
2013-06-14 09:58:59| rfglobalnet Home Page
Northrop Grumman Corporation has developed new gallium arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) high-power amplifiers operating in the E-Band communication frequency spectrum.
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microwave
Northrop Grumman Develops New Gallium Arsenide E-Band High-Power Monolithic Microwave Integrated Circuits
2013-06-14 09:58:59| wirelessdesignonline News Articles
Northrop Grumman Corporation has developed new gallium arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) high-power amplifiers operating in the E-Band communication frequency spectrum.
Tags: integrated
circuits
develops
microwave
Northrop Grumman Develops New Gallium Arsenide E-Band High-Power Monolithic Microwave ...
2013-06-13 06:00:00| Industrial Newsroom - All News for Today
REDONDO BEACH, Calif. - Northrop Grumman Corporation (NYSE: NOC) has developed new gallium arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) high-power amplifiers operating in the E-Band communication frequency spectrum.<br /> <br /> The APH667 and the APH668 are GaAs-based broadband, three-stage amplifier devices that operate from 81 - 86GHz and 71 - 76GHz respectively.<br /> <br /> In 2004, Northrop Grumman became the first company to provide commercial availability of E-Band ...This story is related to the following:Electronic Components and DevicesSearch for suppliers of: High Power Amplifiers |
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microwave
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Monolithic Dual N-Ch JFET supports low noise applications.
2013-05-07 14:31:09| Industrial Newsroom - All News for Today
Available in surface mount SOIC-8, through-hole TO-71, and smaller SOT23-6 packages as well as ROHS compliant versions, Model LSK489 features ultra low noise of 1.5 nV at 1 KHz and gate-to-drain capacitance of 4 pF. Design consists of interleaving both JFETs on same piece of silicon to provide optimal matching and thermal tracking, with nearly zero popcorn noise. Applications include microphone amplifiers, phono preamplifiers, operational amplifiers, sonic imaging, and high-speed comparators. This story is related to the following:Field Effect Transistors (FET) |
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Monolithic Translator integrates 4 DPLLs for 100G muxponders.
2013-02-11 14:32:44| Industrial Newsroom - All News for Today
Intended for OTN transport and switching applications, ZL30165 Line Card Device integrates 4 DPLLs capable of locking on up to 10 inputs, targeting muxponder applications that support multi-client transport on single wavelength. Each channel accepts and generates any frequency from 1 KHz to 750 MHz to support any communication service over optical networks. Operating from crystal resonator or clock oscillator, translator supports 8 input references configurable as single ended or differential. This story is related to the following:Electronic Components and DevicesSearch for suppliers of: Telecommunications Integrated Circuits |
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