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Automotive Power MOSFETs offer RDS(on) down to 8.9 mOhm.

2014-03-06 14:30:54| Industrial Newsroom - All News for Today

With continuous drain currents to 50 A, 100 V n-channel SQJ402EP, SQJ488EP, and SQD50N10-8m9L are optimized for injector boost applications in automotive engine control units. Model SQD50N10-8m9L in DPAK package provides on-resistance down to 8.9 mΩ at 10 V, while Models SQJ402EP and SQJ488EP, housed in 5 x 6 mm PowerPAK SO-8L package, offer values down to 11 mΩ and 21 mΩ at 10 V, respectively. All AEC-Q101-qualifed TrenchFET® power MOSFETs with ThunderFET® technology operate from -55 to +175°C. This story is related to the following:MOSFETs |

Tags: power offer automotive mosfets

 

Power MOSFETs feature very low on-resistance.

2014-02-27 14:31:30| Industrial Newsroom - All News for Today

Available in TO-263 and TO-220 packages, respectively, Models AP99T03GS-HF-3 and AP99T03GP-HF-3 feature low on-resistance of 2.5 mΩ, drain-source breakdown voltage of 30 V, and continuous drain current of 120 A. Model AP99T03GS-HF-3 is suited for commercial and industrial surface-mount applications, while Model AP99T03GP-HF-3 is intended for applications where small PCB footprint or attached heatsink is required. Both N-channel MOSFETs are halogen-free and RoHS-compliant. This story is related to the following:MOSFETs

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Dual N-Channel Power MOSFETs suit automotive applications.

2013-12-13 14:28:09| Industrial Newsroom - All News for Today

Supplied in 5 x 6 mm asymmetric PowerPAK® SO-8L package, 40 V Siliconix SQJ940EP and SQJ942EP combine both high- and low-side MOSFETs required for synchronous DC/DC buck converters. At 10 V, Model SQJ940EP offers max on-resistance of 6.4 mΩ for Channel 2 low-side MOSFET and 16 mΩ for Channel 1 high-side MOSFET, while Model SQJ942EP offers max on-resistance of 11 mΩ for low-side MOSFET and 22 mΩ for high-side MOSFET. Both TrenchFET® devices are AEC-Q101-qualified and operate up to +175°C. This story is related to the following:MOSFETs |

Tags: power applications automotive dual

 

Power MOSFETs suit DC-DC converter applications.

2013-12-12 14:31:30| Industrial Newsroom - All News for Today

Available in 3 models, AP4034 Series N-Channel MOSFETs feature low typical gate charge of 15 nC. Model AP4034GMT-HF-3, housed in PMPAK5x6 package, offers max on-resistance of 8 mΩ and drain-source current rating of 44.3 A. Supplied in standard SO-8 package, Model AP4034GM-HF-3 offers max on-resistance of 9 mΩ and drain-source current of 13 A. Model AP4034GYT-HF-3 has same low max on-resistance of 9 mΩ, but with drain-source current of 15.5 A in 3 x 3 mm footprint. This story is related to the following:MOSFETs |

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SiC Power MOSFETs feature no tail current.

2013-09-27 14:32:04| Industrial Newsroom - All News for Today

Rated at 80 mΩ and 1,200 V, Models SCT2080KE and SCH2080KE are intended for solar inverters, DC-DC converters, UPS, and motor drive applications. Absence of tail current and fast recovery characteristics lower switching losses, while 70–90 ns turn ON/OFF times allow for switching frequencies in hundreds of kHz range. Model SCH2080KE, co-packaged with discrete anti-parallel SiC Schottky Barrier Diode, features forward voltage 3 times smaller than that of body diode. This story is related to the following:MOSFETs

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