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100W, 32V, DC-3.5 GHz Power Transistor: TGF2819-FL Datasheet

2015-09-01 12:24:46| rfglobalnet Downloads

The TGF2819-FL is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

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0.5 6 GHz 100W GaN Switch: TGS2355-SM Datasheet

2015-07-31 13:17:26| rfglobalnet Downloads

The TGS2355-SM is a SPDT reflective GaN switch operating in the 0.5 – 6 GHz frequency range. This switch provides up to 100 W input power handling, and maintains a low insertion loss of 0.8 dB or less, and greater than 25 dB isolation.

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100W, 32V, DC-3.5 GHz Power Transistor: TQP0102 Datasheet

2015-07-29 15:44:00| rfglobalnet Downloads

The TQP0102 is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC – 4 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

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100W, 32V, DC-3.5 GHz Power Transistor: TGF2819-FS Datasheet

2015-07-29 15:41:00| rfglobalnet Downloads

The TGF2819-FS is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

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Wideband 8-Way 0° Splitter/Combiner Handles Up To 100W Input Power With 1 dB Insertion Loss

2015-06-05 08:12:33| rfglobalnet Home Page

Mini-Circuits’ ZN8PD-362HP+ 8-way 0° splitter/combiner provides power handling up to 100W as a splitter with 1.0 dB typical insertion loss (above 9.0 dB theoretical loss) for a wide range of applications from 600 to 3600 MHz.

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