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RFaxis Expands CMOS RF Front-End Portfolio With The Introduction Of World's First Pure CMOS High-Power 2.4GHz WLAN Power Amplifier

2013-06-18 10:17:00| rfglobalnet News Articles

RFaxis, Inc., a fabless semiconductor company focused on innovative, next-generation RF solutions for the wireless connectivity and cellular mobility markets, announced recently that it’s begun mass production of the RFX240 high-power 2.4GHz PA for wireless local area network (WLAN) applications

Tags: power introduction pure portfolio

 

Northrop Grumman Develops New Gallium Arsenide E-Band High-Power Monolithic Microwave Integrated Circuits

2013-06-14 09:58:59| rfglobalnet Home Page

Northrop Grumman Corporation has developed new gallium arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) high-power amplifiers operating in the E-Band communication frequency spectrum.

Tags: integrated circuits develops microwave

 
 

Northrop Grumman Develops New Gallium Arsenide E-Band High-Power Monolithic Microwave Integrated Circuits

2013-06-14 09:58:59| wirelessdesignonline News Articles

Northrop Grumman Corporation has developed new gallium arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) high-power amplifiers operating in the E-Band communication frequency spectrum.

Tags: integrated circuits develops microwave

 

High-Power 1 W LED serves multiple lighting applications.

2013-06-13 14:32:34| Industrial Newsroom - All News for Today

Suited for lighting-grade LED designs in general and residential lighting applications, XI3535 comes in 3.5 x 3.5 x 0.65 mm housing constructed of thermally efficient package material with thermal resistance of 15°C/W. Top-view white LED, offered in ANSI CCT ratings from 2700K–6500K, exhibits light efficacy of 109/115 lm/W (warm/cool white) at 350 mA and 3 V with >80 CRI; 150 mA and 6 V versions are also available. Typ high flux output is at 105/110 lm, and typ viewing angle is 115°. This story is related to the following:Light Emitting Diodes (LED)

Tags: multiple applications led serves

 

Northrop Grumman Develops New Gallium Arsenide E-Band High-Power Monolithic Microwave ...

2013-06-13 06:00:00| Industrial Newsroom - All News for Today

REDONDO BEACH, Calif. - Northrop Grumman Corporation (NYSE: NOC) has developed new gallium arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) high-power amplifiers operating in the E-Band communication frequency spectrum.<br /> <br /> The APH667 and the APH668 are GaAs-based broadband, three-stage amplifier devices that operate from 81 - 86GHz and 71 - 76GHz respectively.<br /> <br /> In 2004, Northrop Grumman became the first company to provide commercial availability of E-Band ...This story is related to the following:Electronic Components and DevicesSearch for suppliers of: High Power Amplifiers |

Tags: develops microwave monolithic northrop

 

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