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120W, 36V, DC-3.5 GHz Power Transistor: T1G4012036-FL Datasheet

2015-09-01 12:38:37| rfglobalnet Downloads

The T1G4012036-FL is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 36V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

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100W, 32V, DC-3.5 GHz Power Transistor: TGF2819-FL Datasheet

2015-09-01 12:24:46| rfglobalnet Downloads

The TGF2819-FL is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

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285W, 36V, DC-2 GHz Power Transistor: T1G2028536-FS Datasheet

2015-09-01 12:01:28| rfglobalnet Downloads

The T1G2028536-FS is a 285W discrete GaN on SiC HEMT with an operating frequency in the DC – 2 GHz range, and an operating voltage of 36V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

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Microwave Power Module: dB-4128 Datasheet

2015-09-01 10:19:55| rfglobalnet Downloads

The dB-4128 is a microwave power module (MPM) providing 200 Watts of pulsed/CW RF output power, and operating in the 6 to 18 GHz frequency range. Its RF signal path consists of a solid state amplifier and a vacuum power booster, and the power supply topology utilizes proprietary high-efficiency, low-noise designs to operate it.This compact, conduction-cooled MPM is designed to operate in extreme military environments for electronic countermeasures, electronic warfare simulations, and multi-band communication systems.

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GaN Power Amplifiers: TGA2594-HM Datasheet

2015-08-11 17:58:41| rfglobalnet Downloads

The TGA2594-HM is a Ka-band distributed GaN power amplifier that operates from 27-31 GHz, provides 36.5 dBm of saturated output power, and has 25 dB of small signal gain. The device is packaged in a CuW-base, flanged package for superior thermal management, and is ideally suited for commercial and military radar, communications, and electronic warfare.

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