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Wolfspeed Releases New 28V 30W GaN HEMT Die

2016-04-29 04:40:09| rfglobalnet Home Page

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, released a new 28V, 30W GaN HEMT bare die at this year’s IEEE Wireless and Microwave Technology Conference (WAMICON), which took place April 11 – 13, 2016 in Clearwater Beach, Fla.

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30W, 28V, DC-6 GHz Power Transistor: T2G6003028-FS Datasheet

2015-09-01 17:12:48| rfglobalnet Downloads

The T2G6003028-FS is an 18W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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30W, 28V, DC-6 GHz Power Transistor: T2G6003028-FL Datasheet

2015-09-01 17:03:49| rfglobalnet Downloads

The T2G6003028-FL is an 18W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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18W, 28V, DC-6 GHz Power Transistor: T2G6001528-Q3 Datasheet

2015-09-01 16:54:37| rfglobalnet Downloads

The T2G6001528-Q3 is an 18W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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7W, 28V, DC-6 GHz Power Transistor: T2G6000528-Q3 Datasheet

2015-09-01 16:45:36| rfglobalnet Downloads

The T2G6000528-Q3 is a 7W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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