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100W, 32V, DC-3.5 GHz Power Transistor: TQP0102 Datasheet

2015-07-29 15:44:00| rfglobalnet Downloads

The TQP0102 is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC – 4 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

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100W, 32V, DC-3.5 GHz Power Transistor: TGF2819-FS Datasheet

2015-07-29 15:41:00| rfglobalnet Downloads

The TGF2819-FS is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

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Richardson RFPD Introduces Pair Of 35W, 32V GaN On SiC RF Power Transistors From TriQuint

2013-01-17 03:46:47| wirelessdesignonline News Articles

Richardson RFPD, Inc. recently announces immediate availability and full design support capabilities for a pair of 35W Gallium Nitride (GaN) radio frequency power transistors from TriQuint Semiconductor, Inc. (TriQuint).

Tags: power pair sic introduces

 

Richardson RFPD Introduces Pair Of 35W, 32V GaN On SiC RF Power Transistors From TriQuint

2013-01-17 03:46:47| rfglobalnet News Articles

Richardson RFPD, Inc. recently announces immediate availability and full design support capabilities for a pair of 35W Gallium Nitride (GaN) radio frequency power transistors from TriQuint Semiconductor, Inc. (TriQuint).

Tags: power pair sic introduces

 

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