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1.5kV galvanic isolation on single mixed-signal chip

2014-12-05 09:15:33| Semiconductors - Topix.net

STMicroelectronics has added a 1,500V galvanic isolation layer to a proprietary bipolar-CMOS-DMOS process to allow analogue, digital and power circuitry to be combined with isolation on a single die. The first product is STGAP1S , a high-voltage IGBT driver with 100ns signal-propagation delay across the isolation layer.

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Category:Electronics and Electrical

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