Home 10W, 32V, DC-6 GHz Power Transistor: T1G6001032-SM Datasheet
 

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10W, 32V, DC-6 GHz Power Transistor: T1G6001032-SM Datasheet

2015-07-29 15:51:36| rfglobalnet Downloads

The T1G6001032-SM is a 10W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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Category:Telecommunications

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