Home › 12W Discrete Power Transistor: TGF2023-2-02 Datasheet
 

Keywords :   


12W Discrete Power Transistor: TGF2023-2-02 Datasheet

2015-09-01 17:36:58| rfglobalnet Home Page

The TGF2023-2-02 is a 12W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

Category:Telecommunications

Latest from this category

All news
»
27.08Have Swiss scientists made a chocolate breakthrough?
27.08Atlantic Tropical Weather Outlook
27.08Eastern North Pacific Tropical Weather Outlook
26.08Tropical Storm Hector Graphics
26.08Hurricane Gilma Forecast Information (.shp)
26.08Hurricane Gilma Best Track Information (.kmz)
26.08Hurricane Gilma Best Track Information (.shp)
26.08Hurricane Gilma 5-Day Track, Uncertainty Cone, Warnings (.shp)
More »