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Home › 25W, 32V, DC-12 GHz GaN RF Transistor: TGF2979-SM Datasheet

 

25W, 32V, DC-12 GHz GaN RF Transistor: TGF2979-SM Datasheet

2015-12-10 09:55:36| rfglobalnet Home Page

The TGF2979-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 25V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: ghz gan transistor datasheet

Category:Telecommunications

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