Home 6W Discrete Power Transistor: TGF2023-2-01 Datasheet
 

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6W Discrete Power Transistor: TGF2023-2-01 Datasheet

2015-07-29 15:54:19| rfglobalnet Downloads

The TGF2023-2-01 is a 6W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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