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7 W Discrete Power Transistor: TGF2952 Datasheet
2015-10-27 11:45:50| wirelessdesignonline Downloads
The TGF2952 is a 7W discrete GaN on SiC HEMT with an operating frequency in the DC – 14 GHz range, has a saturated output power of 38.4 dBm, and power gain of 20.4 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.
Tags: power
discrete
transistor
datasheet
Category:Telecommunications