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70 W Discrete Power Transistor: TGF2957 Datasheet

2015-10-27 12:07:51| rfglobalnet Home Page

The TGF2957 is a 70W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 48.6 dBm, and power gain of 19.2 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

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