Reducing board space required for ESD protection in portable electronics, VESD15A1-HD1-G4-08 bidirectional and symmetrical (BiAs) single-line ESD protection diode provides reverse avalanche breakdown voltage above 15.5 V and low forward voltage from 1.0 x 0.6 x <0.4 mm LLP1006-2L package. Isolation to ground is characterized by leakage current of <0.01 µA and load capacitance of 45 pF at 0 V. Max reverse and forward clamping voltages of 20 V and 1.3 V, respectively, are 1 A.