Supplied in 1 and 4 W designs with hermetically-sealed metal enclosures, coaxial X band high gain power amplifiers (PAs) use hybrid microwave IC design and GaAs pHEMT technology that lend to optimized gain (30–41 dB over -30 and +70°C range), gain flatness (0.50–1.0 dB), linearity, and dynamic range performance. IP3 output performs up to 44 dBm, and products are fully matched internally for 50 Ω input and output. Also, connectorized SMA amplifier modules are unconditionally stable.
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