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Cree Announces Large Signal Accuracy
2015-04-17 12:31:14| Industrial Newsroom - All News for Today
Cree, Inc., a leading global supplier of gallium nitride on silicon carbide (GaN-on-SiC) high electron mobility transistors (HEMTs), has released a new application note describing the remarkable accuracy of its large signal models for RF power transistors, which allow RF design engineers to reduce PA design...
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