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Cree Confronts TWT Radar System Issues With Record-Breaking High Power RF Devices
2015-05-15 04:10:38| rfglobalnet Home Page
Cree, Inc., a leader in gallium nitride (GaN) RF devices, has introduced two industry-leading GaN HEMT (high electron mobility transistor) devices that solve a number of long-standing issues for radar systems employing traditional travelling wave tube (TWT) amplifiers.
Tags: high
system
power
issues
Category:Telecommunications
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