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Cree Releases Industry's Highest Power 50V GaN HEMT (320W)
2014-12-12 04:08:12| rfglobalnet Home Page
Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components: a 20W, 6GHz die; a 75W, 6GHz die; and a 320W, 4GHz die.
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