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Cree Ships over Two Million GaN HEMT Devices for Telecom Infrastructure
2013-06-03 06:00:00| Industrial Newsroom - All News for Today
DURHAM, N.C. – Cree, Inc. (Nasdaq: CREE) reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth. As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve ...This story is related to the following:Green & CleanSearch for suppliers of: RF Transistors | Gallium Nitride (GaN) Transistors | High Voltage Transistors
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Category:Industrial Goods and Services