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DC 4 GHz GaN RF Transistors: QPD1009 Datasheet

2016-04-28 10:01:05| wirelessdesignonline Downloads

The QDP1009 is a discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. It is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

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