Home › DC 4 GHz GaN RF Transistors: QPD1009 Datasheet
 

Keywords :   


DC 4 GHz GaN RF Transistors: QPD1009 Datasheet

2016-04-28 10:01:05| rfglobalnet Downloads

The QDP1009 is a discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. It is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

Tags: ghz gan datasheet transistors

Category:Telecommunications

Latest from this category

All news
»
30.09Eastern North Pacific Tropical Weather Outlook
30.09Tropical Depression Joyce Forecast Advisory Number 11
30.09California governor blocks landmark AI safety bill
30.09Tropical Storm Isaac Graphics
30.09Tropical Storm Isaac Forecast Discussion Number 17
30.09Tropical Storm Isaac Wind Speed Probabilities Number 17
30.09Tropical Storm Isaac Forecast Advisory Number 17
30.09Tropical Storm Isaac Public Advisory Number 17
More »