Supplied in low-profile, 5 x 5 mm, 31-pin, thermally enhanced PowerPAK® MLP, SiC620 VRPower® integrated power stages combine high- and low-side TrenchFET® Gen IV n-channel MOSFETs, MOSFET driver IC, and bootstrap Schottky diode. Devices are fully compliant with DrMOS 4.0 specification and deliver currents in excess of 60 A per phase and up to 95% peak efficiency. With minimized package parasitics, devices enable switching frequencies to 1.5 MHz.<br />
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