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Dual N-Channel Power MOSFET features low on-resistance.

2014-03-31 14:31:25| Industrial Newsroom - All News for Today

Integrating 2 MOSFETs into one PowerPAK® SC-70 package with 2 x 2 mm footprint, halogen-free and RoHS-compliant SiA936EDJ helps conserve PCB space, simplify designs, and increase power efficiency in portable electronics. This dual n-channel TrenchFET® power MOSFET offers low on-resistance for 20 V (12 and 8 V VGS) devices at 4.5 and 2.5 V gate drives. On-resistance is 34 mΩ (4.5 V), 37 mΩ (3.7 V), and 45 mΩ (2.5 V), and built-in ESD protection is rated at 2,000 V. This story is related to the following:MOSFETs

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Category:Industrial Goods and Services

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