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Epitaxial SiC Films Grown on 300mm Si Wafers
2013-05-29 06:00:00| Industrial Newsroom - All News for Today
Potentially an ultimate barrier film for GaN on silicon<br /> <br /> NEWPORT, England and BRISBANE, Australia -- The Queensland Micro and Nanotechnology Facility (QMF) of Griffith University and industry partner SPTS Technologies, a supplier of advanced wafer processing solutions for the global semiconductor industry and related markets, have announced epitaxial growth of 3C silicon carbide (SiC) films on 300mm silicon wafers. This breakthrough is the result of over 10 years research at QMF on ...This story is related to the following:Film | Silicon Wafers
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