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Fast Switching NPT IGBTs operate in harsh environments.
2013-07-18 14:30:15| Industrial Newsroom - All News for Today
Offered in 45, 70, and 95 A current ratings, 650 V non-punch through (NPT) insulated bipolar gate transistors (IGBTs) enable switching speeds up to 150 kHz – further improved when transistors are paired with SiC free-wheeling diodes. Products are based on advanced Power MOS 8™ technology and leverage wafer thinning process, reducing total switching losses, and may be paralleled (positive temperature coefficient of Vcesat) to improve reliability in high-current modules. This story is related to the following:High Current Transistors |
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