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Home › Fujitsu Develops High-Output Mm-Wave Transceiver Based On GaN HEMT

 

Fujitsu Develops High-Output Mm-Wave Transceiver Based On GaN HEMT

2013-06-25 08:44:09| rfglobalnet News Articles

Fujitsu Laboratories of Kawasaki, Japan has developed compact gallium nitride high-electron-mobility transistor (HEMT)-based transceiver module technology with an output of 10W operating at frequencies up to the millimeter-wave band.

Tags: based fujitsu develops gan

Category:Telecommunications

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