je.st
news
Fully Qualified Low-R(on) 650 V GaN FET comes in TO-247 package.
2016-03-30 14:31:06| Industrial Newsroom - All News for Today
Available in TO-247 package that facilitates design and development, TPH3207WS GaN (gallium nitride) field effect transistor (FET) lets designers reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs. On-resistance of 41 mΩ and Qrr of 175 nC help engineers improve system reliability, performance, and power density, and cascode configuration (EZ-GaN™) can be driven with off-the-shelf drivers.
Tags: fully
package
qualified
gan
Category:Industrial Goods and Services