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GaN HEMTs target 1.2-1.4 GHz L-band radar systems.
2013-08-27 14:29:57| Industrial Newsroom - All News for Today
Based on 50 V, 0.4µ GaN on SiC foundry process, Models CGHV14250and CGHV14500 optimize performance of band-specific applications ranging from UHF to 1,800 MHz. Model CGHV14250 features 330 W typical output power, 18 dB power gain, and 77% typical drain efficiency, while Model CGHV14500 provides 500 W typical output power, 17 dB power gain, and 70% typical drain efficiency. Available in ceramic/metal flange and pill packages, both transistors feature 0.3 dB pulsed amplitude droop. This story is related to the following:Transistors |
Tags: systems
target
ghz
radar
Category:Industrial Goods and Services