Home GaN on SiC HEMT Pulsed Power Transistors offer 650 W peak output.
 

Keywords :   


GaN on SiC HEMT Pulsed Power Transistors offer 650 W peak output.

2015-03-27 13:31:09| Industrial Newsroom - All News for Today

Available in standard flange or earless flange packaging, MAGX-000912-650L00 and MAGX-000912-650L0S are gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistors intended for L-band pulsed avionics applications. These gold metalized, internally matched, GaN on SiC depletion mode RF power transistors operate over 960–1,215 MHz range and feature 600 year MTTF. Peak output power is 650 W with 20 dB typ gain and 62% drain efficiency.

Tags: power offer output peak

Category:Industrial Goods and Services

Latest from this category

All news

19.11POWTEX2024 The 25th International Powder Technology Exhibition Tokyo
Industrial Goods and Services »
24.11 Beautiful World CD
24.11VIII
24.11PLUS MADHOUSE( ) 2
24.11KATO 10-1537 415
24.11125f-slim
24.11
24.11olend ona soft bag
24.1110ONKYO
More »