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GaN on SiC RF Power Transistor delivers 750 W peak power.

2013-09-19 14:31:47| Industrial Newsroom - All News for Today

Intended for air traffic control and collision avoidance equipment, MDSGN-750ELMV is based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology. Solution delivers 750 W of peak power with 17 dB power gain and 70% typ drain efficiency when operating at 1,030/1,090 MHz. Transistor handles commercial Mode-S ELM (Extended Length Message) pulsing conditions for 1,030 MHz ground based interrogators and 1,090 MHz airborne transponders. This story is related to the following:RF Transistors |

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Category:Industrial Goods and Services

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