Home › HRL Laboratories' Breakthrough May Pave The Way For Gallium Nitride To Supplant Silicon In Integrated Circuits
 

Keywords :   


HRL Laboratories' Breakthrough May Pave The Way For Gallium Nitride To Supplant Silicon In Integrated Circuits

2016-02-05 05:10:24| rfglobalnet Home Page

Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit.

Tags: integrated silicon circuits laboratories

Category:Telecommunications

Latest from this category

All news
»
26.06PPG to Announce Second-quarter 2024 Results July 18
26.06Fresh Coat for First Responders: New Hampshire Fire Station Gets a Makeover by California Paints
26.06Michigan Sets Record Recycling Rate in 2023, Recycles Nearly 70,000 Tons of Materials
26.06Companies Seek Federal EPR: How Producers Can Prepare
26.06Q&A with GFLs Tyler Stefure: Integrating New Fleet Tech & Upholding GFL Values
26.06SWANA Publishes Report on the Performance of Seattles Zero Waste System
26.06Baltimore Sues Major Brands for Alleged Role in Plastic Pollution Crisis
26.06Petco Aims Sight at Large-Scale Recycling Program to Divert LDPE Plastic from Landfills
More »